InGaAs/AlGaAs/GaAs semiconductor lasers (λ=900-920 nm) with broadened asymmetric waveguides and improved current - voltage characteristics

被引：3

作者：

Volkov, N. A. ^{[1
]}

Bagaev, T. A. ^{[1
]}

Sabitov, D. R. ^{[1
]}

Andreev, A. Yu ^{[1
]}

Yarotskaya, I., V ^{[1
]}

Padalitsa, A. A. ^{[1
]}

Ladugin, M. A. ^{[1
]}

Marmalyuk, A. A. ^{[1
,2
]}

Bakhvalov, K., V ^{[3
]}

Veselov, D. A. ^{[3
]}

Lyutetskii, A., V ^{[3
]}

Rudova, N. A. ^{[3
]}

Strelets, V. A. ^{[3
]}

Slipchenko, S. O. ^{[3
]}

Pikhtin, N. A. ^{[3
]}

机构：

[1] Sigm Plus Ltd, Ul Vvedenskogo 3, Moscow 117342, Russia

[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia

[3] Russian Acad Sci, Ioffe Inst, Ul Politekhn Skaya 26, St Petersburg 194021, Russia

来源：

QUANTUM ELECTRONICS | 2021年 / 51卷 / 10期

关键词：

semiconductor laser; asymmetric waveguide; doping; output power; THRESHOLD CURRENT-DENSITY; TEMPERATURE-DEPENDENCE; HIGH-POWER; ALGAINAS/INP LASERS; OUTPUT POWER; QUANTUM; EFFICIENCY;

D O I：

10.1070/QEL17628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current - voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current - voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70 % - 72 %.

引用

页码：905 / 908

页数：4

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