Temperature dependence of current-voltage characteristics of Ni-AlGaN/GaN Schottky diodes

被引：60

作者：

Lim, Wantae ^{[1
]}

Jeong, Jae-Hyun ^{[1
]}

Lee, Jae-Hoon ^{[1
]}

Hur, Seung-Bae ^{[1
]}

Ryu, Jong-Kyu ^{[1
]}

Kim, Ki-Se ^{[1
]}

Kim, Tae-Hyung ^{[2
]}

Song, Sang Yeob ^{[2
]}

Yang, Jong-In ^{[2
]}

Pearton, S. J. ^{[3
]}

机构：

[1] Samsung LED, GaN Power Res Grp, Suwon 443743, South Korea

[2] Samsung LED, R&D Team 1, Suwon 443743, South Korea

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 24期

关键词：

FIELD-EFFECT TRANSISTORS; GAN RECTIFIERS; PERFORMANCE; MECHANISMS; DENSITY; LEAKAGE;

D O I：

10.1063/1.3525931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ni-AlGaN/GaN Schottky barrier diodes (SBDs) with lateral geometry were fabricated on sapphire substrates. At 300 K, devices with 500-mu m-diameter Schottky contacts exhibited breakdown voltage (V(B)) of 765 V, forward current (I(F)) of 0.065 A at 1.5 V, and specific on-resistance (R(on)) of 81.3 m Omega cm(2), producing a figure-of-merit (V(B)(2)/R(on)) of similar to 7.2 MW cm(-2). Measured in multifinger patterns, the same parameters were 420 V, 3.2 A, 4.6 m Omega cm(2), and 38.4 MW cm(-2), respectively, at 300 K. With the increase in measurement temperature from 300 to 450 K, SBDs with dimensions of 3000 x 3000 mu m(2) showed larger effective barrier heights (0.8 eV at 300 K and 1.27 eV at 475 K) and a slightly negative temperature coefficient (-0.48 V K(-1)) for reverse breakdown voltage, while there was a little change in reverse leakage current. These results show the strong influence of barrier height inhomogeneity on the temperature dependence of apparent barrier heights obtained through current-voltage measurements. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525931]

引用

页数：3

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