Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

被引：89

作者：

Yu, Guoqiang ^{[1
]}

Wang, Zhenxing ^{[1
,2
]}

Abolfath-Beygi, Maryam ^{[1
]}

He, Congli ^{[1
]}

Li, Xiang ^{[1
]}

Wong, Kin L. ^{[1
]}

Nordeen, Paul ^{[3
]}

Wu, Hao ^{[4
]}

Carman, Gregory P. ^{[3
]}

Han, Xiufeng ^{[4
]}

Alhomoudi, Ibrahim A. ^{[6
]}

Amiri, Pedram Khalili ^{[1
,5
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China

[3] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA

[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[5] Inston Inc, Los Angeles, CA 90095 USA

[6] King Abdulaziz City Sci & Technol, Natl Nanotechnol Res Ctr, Riyadh 11442, Saudi Arabia

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.4907677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate strain-induced modulation of perpendicular magnetic anisotropy (PMA) in (001)-oriented [Pb(Mg1/3Nb2/3)O-3]((1-x))-[PbTiO3](x) (PMN-PT) substrate/Ta/CoFeB/MgO/Ta structures using ferromagnetic resonance (FMR). An in-plane biaxial strain is produced by applying voltage between the two surfaces of the PMN-PT substrate, and is transferred to the ferromagnetic CoFeB layer, which results in tuning of the PMA of the CoFeB layer. The strain-induced change in PMA is quantitatively extracted from the experimental FMR spectra. It is shown that both first and second-order anisotropy terms are affected by the electric field, and that they have opposite voltage dependencies. A very large value of the voltage-induced perpendicular magnetic anisotropy modulation of similar to 7000 fJ/V.m is obtained through this strain-mediated coupling. Using this FMR technique, the magnetostriction coefficient lambda is extracted for the ultrathin 1.1 nm Co20Fe60B20 layer, and is found to be 3.7 x 10(-5), which is approximately 4 times larger than the previously reported values for CoFeB films thicker than 5 nm. In addition, the effect of strain on the effective damping constant (alpha(eff)) is also studied and no obvious modulation of the alpha(eff) is observed. The results are relevant to the development of CoFeB-MgO magnetic tunnel junctions for memory applications. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 44 条

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