Preparation of CuInSe2 thin films on Mo-coated glass substrates by pulse-plated electrodeposition

CuInSe2 thin films are prepared on Mo-coated glass substrates by pulse-plated electrodeposition from an aqueous solution including CuCl2, InCl3 and SeO2. Film deposition with a stoichiometric composition and a smooth surface has been achieved by the control of the applied pulses with a duty cycle theta of 33% and a cathode potential during on-time of -0.7V vs the saturated calomel electrode (SCE). The deposited films are annealed in nitrogen gas to be crystallized. The optimum annealing conditions have been determined using X-ray diffraction and Raman spectra measurement as: annealing temperature of 400 degrees C, and annealing duration of 90 min.