Indium dopant behaviour in CdTe single crystals

被引：39

作者：

Fochuk, P

Panchuk, O

Feychuk, P

Shcherbak, L

Savitskyi, A

Parfenyuk, O

Ilashchuk, M

Hage-Ali, M

Siffert, P

机构：

[1] Univ Chernivtsi, Dept Chem, UA-274012 Chernivtsi, Ukraine

[2] Univ Chernivtsi, Dept Phys, UA-274012 Chernivtsi, Ukraine

[3] CNRS, PHASE, F-67037 Strasbourg, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 458卷 / 1-2期

关键词：

CdTe; In; electroconductivity; diffusion; point defects; associates;

D O I：

10.1016/S0168-9002(00)00926-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A brief review of different aspects of In atoms in the CdTe lattice behavior, necessary for scientific preparation of radiation-sensitive material is presented. Data concerning the CdTe-In T-x phase diagram, In segregation, diffusion and solubility as function of stoichiometric relations in CdTe and temperature are included. Low- and high-temperature electrical measurements results are discussed in the framework of compensation phenomena. A short review concerning the manufacture of In-doped CdTe crystals as well as their practical use is included. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：104 / 112

页数：9