Indium dopant behaviour in CdTe single crystals

被引：39
作者：
Fochuk, P
Panchuk, O
Feychuk, P
Shcherbak, L
Savitskyi, A
Parfenyuk, O
Ilashchuk, M
Hage-Ali, M
Siffert, P
机构：
[1] Univ Chernivtsi, Dept Chem, UA-274012 Chernivtsi, Ukraine
[2] Univ Chernivtsi, Dept Phys, UA-274012 Chernivtsi, Ukraine
[3] CNRS, PHASE, F-67037 Strasbourg, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 458卷 / 1-2期
关键词：
CdTe; In; electroconductivity; diffusion; point defects; associates;
D O I：
10.1016/S0168-9002(00)00926-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A brief review of different aspects of In atoms in the CdTe lattice behavior, necessary for scientific preparation of radiation-sensitive material is presented. Data concerning the CdTe-In T-x phase diagram, In segregation, diffusion and solubility as function of stoichiometric relations in CdTe and temperature are included. Low- and high-temperature electrical measurements results are discussed in the framework of compensation phenomena. A short review concerning the manufacture of In-doped CdTe crystals as well as their practical use is included. (C) 2001 Elsevier Science B.V. All rights reserved.
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收藏
页码：104 / 112
页数：9
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