Device simulation of FASnI3 based perovskite solar cell with Zn(O0.3, S0.7) as electron transport layer using SCAPS-1D

Zinc oxy-sulphide (ZnO1-xSx) has proven to be the most promising material for electron transport layer (ETL) as a replacement of CdS in thin film and perovskite solar cells due to its ability to tune the bandgap energy (2.7-3.8 eV). FASnI(3) (CH4N2SnI3) based perovskite solar cells are found to be more efficient and stable than their MASnI(3) counterparts because of its wider bandgap (1.41 eV) and better temperature stability. In this paper, FASnI(3) based perovskite solar cell employing zinc oxy-sulphide (Zn (O-0.3, S-0.7)) as ETL and copper thiocyanate (CuSCN) as HTL is presented. The proposed structure FTO/Zn(O-0.3, S-0.7)/FASnI(3)/CuSCN/Au has been simulated using SCAPS-1D software. The parameters from various experimental and theoretical reported works were used to simulate the proposed solar cell and it resulted in 14.46% of power conversion efficiency (PCE). In order to investigate the impact of active layer on the performance of the proposed device, the parameters of active layer like thickness and defect density have been varied. Furthermore, parameters such as electron affinity, doping density and thickness of ETL and HTL respectively have also been varied to examine their influence on the output device parameters and optimized results deduced accordingly. Finally, the device simulation with the optimized parameters has resulted in improved output parameters with V-OC of 1.0859 V, J(SC) of 28.12 mAcm(-2), FF of 84.96% and PCE of 25.94%, thus, paving the way for novel perovskite solar cells employing tin which are environmentally safe being lead free and have efficiency comparable tothe lead based counterparts.