Perm anent-magnet-free stabilization and sensitivity tailoring of magnetoresistive field sensors

被引:11
作者
Halloran, S. T. [1 ]
da Silva, F. C. S.
Fardi, H. Z.
Pappas, D. P.
机构
[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA
[2] Univ Colorado, Boulder, CO 80305 USA
[3] Univ Colorado, Denver, CO 80202 USA
[4] Hlth Sci Ctr, Denver, CO 80217 USA
关键词
D O I
10.1063/1.2764243
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have exploited the coupling across a ruthenium spacer between a ferromagnetic and an antiferromagnetic layer to stabilize the magnetization in a given direction and tailor the magnetic sensitivity of the,sensor for various applications. Ruthenium is used as the nonmagnetic coupling layer and is self-aligned with the ferromagnetic free layer and antiferromagnetic pinning layer, and the thickness is varied to change the slope of the transfer curve in the linear region, i.e., sensitivity. This simple technique is shown to increase the dynamic range of anisotropic magnetoresistive sensors without additional lithography. (c) 2007 American Institute of Physics.
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页数:3
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