Room-Temperature Processed Nb2O5 as the Electron-Transporting Layer for Efficient Planar Perovskite Solar Cells

被引：119

作者：

Ling, Xufeng ^{[1
]}

Yuan, Jianyu ^{[1
]}

Liu, Dongang ^{[1
]}

Wang, Yongjie ^{[1
]}

Zhang, Yannan ^{[1
]}

Chen, Si ^{[1
]}

Wu, Haihua ^{[1
]}

Jin, Feng ^{[3
,4
]}

Wu, Fupeng ^{[1
]}

Shi, Guozheng ^{[1
]}

Tang, Xun ^{[1
]}

Zheng, Jiawei ^{[1
]}

Liu, Shengzhong ^{[2
]}

Liu, Zhike ^{[2
]}

Ma, Wanli ^{[1
]}

机构：

[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China

[2] Shaanxi Normal Univ, Sch Mat Sci & Engn, Key Lab Appl Surface & Colloid Chem, Natl Minist Educ,Shaanxi Engn Lab Adv Energy Tech, Xian 710119, Peoples R China

[3] Fudan Univ, Shanghai Ultraprecis Opt Mfg Engn Res Ctr, Shanghai 200433, Peoples R China

[4] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 27期

基金：

中国国家自然科学基金;

关键词：

room-temperature; Nb2O5; electron-transporting layer; perovskite solar cells; flexible; BLOCKING LAYER; THIN-FILMS; PERFORMANCE; OXIDE; HYSTERESIS; PHOTOANODE; LENGTHS;

D O I：

10.1021/acsami.7b05113

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we demonstrate high-efficiency planar perovskite solar cells (PSCs), using room-temperature sputtered niobium oxide (Nb2O5) as the electron-transporting layer (ETL). Widely spread ETL-like TiO2 often requires high-temperature (>450 degrees C) sintering, which is not desired for the fabrication of flexible devices. The amorphous Nb2O5 (labeled as a-Nb2O5) ETL, without any heat treatment, can give a best power conversion efficiency (PCE) of 17.1% for planar PSCs. Interestingly, the crystalline Nb2O5(labeled as c-Nb2O5), with high-temperature (500 degrees C) annealing, results in a very similar PCE of 17.2%, indicating the great advantage of a-Nb2O5 in energy saving. We thus carried out a systematical investigation on the properties of the a-Nb2O5 film. The Hall effect measurements indicate both high mobility and conductivity of the a-Nb2O5 film. Kelvin probe force microscopy measurements define the Fermi levels of a-Nb2O5 and c-Nb2O5 as -4.31 and -4.02 eV, respectively, which allow efficient electron extraction at the Nb2O5/perovskite interface, regardless of the additional heat treatment on Nb2O5 film. Benefitting from the low-temperature process, we further demonstrated flexible PSCs based on a-Nb2O5, with a considerable PCE of 12.1%. The room-temperature processing and relatively high device performance of a-Nb2O5 suggest a great potential for its application in optoelectrical devices.

引用

页码：23181 / 23188

页数：8