High-efficiency harmonic-control amplifier

被引:26
作者
Ingruber, B [1 ]
Pritzl, W
Smely, D
Wachutka, M
Magerl, G
机构
[1] Vienna Tech Univ, Dept Commun & Radio Frequency Engn, A-1040 Vienna, Austria
[2] ELB Form GMBH, R&D Dept, A-1040 Vienna, Austria
基金
奥地利科学基金会;
关键词
class F; efficiency; harmonic control; linearity; microwave; power amplifier;
D O I
10.1109/22.681213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A half-sinusoidally driven class-A harmonic-control amplifier (hHCA) combines the advantage of high gain of class A with the advantage of high drain efficiency of class F. Consequently, power-added efficiency is increased as compared with state-of-the-art high-efficiency amplification techniques. As this innovative amplifier concept consists of a pulse-forming class-B amplifier stage followed by a class-A power-amplifier stage, intermodulation distortion is low even in saturation, The realization of such a two-stage hHCA offers 71% overall efficiency, 27.9-dBm output power, and 22.4-dB gain at 1.62 GHz. Two-tone measurements at 1-dB-gain compression, where the amplifier's single-carrier (SC) overall efficiency is still 64%, has demonstrated third-and fifth-order intermodulation distortion of -29 and -21 dBc, respectively.
引用
收藏
页码:857 / 862
页数:6
相关论文
共 13 条
  • [1] GAAS-FET POWER-AMPLIFIER MODULE WITH HIGH-EFFICIENCY
    CHIBA, K
    KANMURI, N
    [J]. ELECTRONICS LETTERS, 1983, 19 (24) : 1025 - 1026
  • [2] DILORENZO JV, 1982, GAAS FET PRINCIPLES
  • [3] Duvanaud C., 1993, IEEE Microwave and Guided Wave Letters, V3, P268, DOI 10.1109/75.242219
  • [4] EASTON M, 1992, IEEE MTT S INT MICR, P1183
  • [5] Ingruber B, 1996, IEEE MTT-S, P859, DOI 10.1109/MWSYM.1996.511073
  • [6] THE TRANSMISSION-LINE HIGH-EFFICIENCY CLASS-E AMPLIFIER
    MADER, TB
    POPOVIC, ZB
    [J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (09): : 290 - 292
  • [7] AN IMPROVED GAAS-MESFET MODEL FOR SPICE
    MCCAMANT, AJ
    MCCORMACK, GD
    SMITH, DH
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (06) : 822 - 824
  • [8] Mitzlaff JE., 1988, U. S. Patent, Patent No. [4,717,884, 4717884]
  • [9] NISHIKI S, 1987, IEEE MTT S INT MICR, P963
  • [10] HIGH-EFFICIENCY QUASIMICROWAVE GAAS-FET POWER-AMPLIFIER
    NOJIMA, T
    NISHIKI, S
    CHIBA, K
    [J]. ELECTRONICS LETTERS, 1987, 23 (10) : 512 - 513