Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon

被引:110
作者
Beyer, W [1 ]
机构
[1] Forschungszentrum Julich, Inst Photovoltaik, D-52425 Julich, Germany
关键词
microcrystalline silicon; diffusion; evolution;
D O I
10.1016/S0927-0248(02)00438-5
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Hydrogen (H) diffusion and evolution effects in hydrogenated amorphous and microcrystalline silicon (Si) films are discussed. Numerous diffusion and evolution related effects have been discovered and various models for H motion, trapping and evolution effects have been proposed. Microstructure and H diffusion and evolution effects are found to be strongly interdependent. Various aspects of H diffusion in compact material are consistent with a trapping/detrapping motion of atomic H, restricted by H solubility effects and describable in terms of an equilibrium band model. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:235 / 267
页数:33
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