Preparation of CdS Quantum Dots/CdTe Nanorod Array Photoelectrode and Its Photoelectric Property

The photoelectrode of CdS quantum dots/CdTe nanorod arrays were prepared by chemical deposition for CdS and RF sputtering for CdTe. The achieved samples were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), UV-vis absorption spectroscopy (UV-vis) and optical electrode electrochemical workstation. The results confirm that the photoelectrode consists of CdS quantum dots and CdTe nanorods. CdTe nanorods grow in a preferred orientation along the (111) direction. The novel pyroelectric phenomenon is found in the photoelectrode. The best results are achieved in the photoelectrode with 25 cycles of CdS quantum dots, and the open circuit voltage and short-circuit current are 0.49 V and 71.09 mu A, respectively. The photoelectric ratio between the on and off is 6. We also find the current reversal phenomenon caused by pyroelectricity, which is of great significance for improving the performance of photoelectric device.