Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

被引:54
作者
Yugova, I. A. [1 ,2 ]
Glazov, M. M. [3 ]
Yakovlev, D. R. [1 ,3 ]
Sokolova, A. A. [2 ]
Bayer, M. [1 ]
机构
[1] Tech Univ Dortmund, D-44221 Dortmund, Germany
[2] St Petersburg State Univ, Fac Phys, St Petersburg 198504, Russia
[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
RELAXATION ANISOTROPY; NANOSTRUCTURES;
D O I
10.1103/PhysRevB.85.125304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The coherent spin dynamics of resident carriers, electrons, and holes in semiconductor nanostructures is studied theoretically under the conditions of periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed. Accumulation of the spin polarization is manifested either as resonant spin amplification or as mode locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble.
引用
收藏
页数:16
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