Effect of deposition rate and a-Si precursor or cap layer on structure and magnetic properties of iron films on silicon substrates

被引：4
作者：
Gouralnik, A. S. [1 ]
Galkin, N. G. [1 ,2 ]
Ivanov, V. A. [2 ]
Cherednichenko, A. I. [2 ]
Plotnikov, V. S. [2 ]
Pustovalov, E. V. [2 ]
机构：
[1] Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Far E State Univ, Vladivostok 690000, Russia
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 24期
关键词：
Iron; Silicon surface; Silicides; Film growth process; Deposition rate; Intermixing;
D O I：
10.1016/j.tsf.2011.05.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultrafast-deposition and a-Si precursor or cap layer are analyzed as possible approaches to the control upon interface intermixing and film growth process. A simple and effective design is delivered providing deposition rates up to 10(4) nm/s. XPS results evidence formation of Fe3Si in the layered structure Fe/a-Si/Si. Cross-section HRTEM data demonstrate enhanced intermixing at the a-Si/Fe film interface. Magnetic properties of the Fe-Si structures grown by the above methods are studied by in situ magneto-optic Kerr effect. Intermixing at the Fe/Si interface is the result of chemical reaction rather than diffusion. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：8520 / 8523
页数：4
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