Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition

We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.