Diffusion enhanced carbon loss from SiGeC layers due to oxidation

被引：11

作者：

Carroll, MS

Sturm, JC

Napolitani, E

De Salvador, D

Berti, M

Stangl, J

Bauer, G

Tweet, DJ

机构：

[1] Agere Syst, Murray Hill, NJ 07974 USA

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[3] INFM, Padua, Italy

[4] Univ Padua, Dept Phys, Padua, Italy

[5] Johannes Kepler Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria

[6] Sharp Labs Amer, Camas, WA 98607 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.64.073308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of annealing 25-nm-thick pseudomorphic Si0.7865Ge0.21C0.0035 layers on silicon substrates in nitrogen or oxygen at 850 degreesC was examined for different silicon cap thicknesses and annealing times by x-ray diffraction and secondary-ion mass spectrometry. Carbon is found to diffuse rapidly out of the SiGeC layer and even out of the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases, implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

引用

页码：733081 / 733084

页数：4

共 15 条

[1] Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions [J].

Bracht, H ;

Stolwijk, NA ;

Mehrer, H .

PHYSICAL REVIEW B, 1995, 52 (23) :16542-16560

[2] Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation [J].

Carroll, MS ;

Chang, CL ;

Sturm, JC ;

Büyüklimanli, T .

APPLIED PHYSICS LETTERS, 1998, 73 (25) :3695-3697

[3]

CARROLL MS, IN PRESS PHYS REV B

[4]

CARROLL MS, 2000, MAT RES SOC S P, V610

[5]

DAVIES G, 1994, HDB SEMICONDUCTORS, P1558

[6] Lattice parameter of Si1-x-yGexCy alloys [J].

De Salvador, D ;

Petrovich, M ;

Berti, M ;

Romanato, F ;

Napolitani, E ;

Drigo, A ;

Stangl, J ;

Zerlauth, S ;

Mühlberger, M ;

Schäffler, F ;

Bauer, G ;

Kelires, PC .

PHYSICAL REVIEW B, 2000, 61 (19) :13005-13013

[7] INTERACTIONS OF SILICON POINT-DEFECTS WITH SIO2-FILMS [J].

DUNHAM, ST .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :685-696

[8] The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures [J].

Kulik, LV ;

Hits, DA ;

Dashiell, MW ;

Kolodzey, J .

APPLIED PHYSICS LETTERS, 1998, 72 (16) :1972-1974

[9]

LADD LA, 1986, MATER RES SOC S P, V59, P445

[10] The contribution of vacancies to carbon out-diffusion in silicon [J].

Scholz, RF ;

Werner, P ;

Gösele, U ;

Tan, TY .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :392-394

← 1 2 →