Electrical properties of Ta2O5-doped TiO2 varistor ceramics sintered at low-temperature

被引：21

作者：

Gong, Yunyun ^{[1
]}

Chu, Ruiqing ^{[1
]}

Xu, Zhijun ^{[1
]}

Sun, Jiao ^{[1
]}

Chao, Fenxia ^{[1
]}

Ma, Shuai ^{[1
]}

Hao, Jigong ^{[1
]}

Li, Huaiyong ^{[1
]}

Li, Guorong ^{[2
]}

机构：

[1] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng 252059, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2015年 / 41卷 / 07期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Dielectric properties; TiO2 varistor ceramics; Tantalum oxide; Varistor properties; CAPACITOR; BEHAVIOR; PHASE; CEO2; (CA;

D O I：

10.1016/j.ceramint.2015.03.082

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

TiO2-based varistor ceramics doped with 0.25-1.00 mol% Ta2O5 were prepared by the conventional solid state reaction technique at 1300 degrees C and the effects of Ta2O5 substitution on their electrical properties have been studied. The results showed that the Ta2O5 dopant played an important role in the formation of the grain boundary barriers. Good electrical properties with E-1 (mA)=14.9 V/mm, alpha=4.48, epsilon(r)=9.68 x 10(4), tan delta=0.36 were obtained for 0.50 mol% Ta2O5 addition. These results indicate the 99.5 mol% TiO2+0.50 mol% Ta2O5+2 wt% (0.723 mol% Bi2O3+1 mol% B2O3) composition might be a suitable candidate for capacitor varistor functional device. (C) 2015 Published by Elsevier Ltd and Techna Group S.r.l.

引用

页码：9183 / 9187

页数：5

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