Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193 nm photoresist roughening and degradation

被引：68

作者：

Nest, D. ^{[1
]}

Graves, D. B. ^{[1
]}

Engelmann, S. ^{[2
]}

Bruce, R. L. ^{[2
,3
]}

Weilnboeck, F. ^{[2
,3
]}

Oehrlein, G. S. ^{[2
,3
]}

Andes, C. ^{[4
]}

Hudson, E. A. ^{[5
]}

机构：

[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA

[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[3] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA

[4] Rohm & Haas Elect Mat, Marlborough, MA 01752 USA

[5] Lam Res Corp, Fremont, CA 94538 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2912028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The roles of ultraviolet/vacuum ultraviolet (UV/VUV) photons, Ar+ ion bombardment and heating in the roughening of 193 nm photoresist have been investigated. Atomic force microscopy measurements show minimal surface roughness after UV/VUV-only or ion-only exposures at any temperature. Simultaneous UV/VUV, ion bombardment, and heating to surface temperatures of 60-100 degrees C result in increased surface roughness, and is comparable to argon plasma-exposed samples. Ion bombardment creates a modified near-surface layer while UV/VUV radiation results in loss of carbon-oxygen bonds up to a depth of similar to 100 nm. Enhanced roughness is only observed in the presence of all three effects. (C) 2008 American Institute of Physics.

引用

页数：3

共 22 条

[1] ION-BOMBARDMENT OF POLYIMIDE FILMS [J].

BACHMAN, BJ ;

VASILE, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2709-2716

[2] Modification of the micro- and nanotopography of several polymers by plasma treatments [J].

Coen, MC ;

Lehmann, R ;

Groening, P ;

Schlapbach, L .

APPLIED SURFACE SCIENCE, 2003, 207 (1-4) :276-286

[3] SURFACE MODIFICATIONS OF POLYPROPYLENE AFTER IN-SITU AR AND N-2 PLASMA TREATMENTS - AN XPS STUDY [J].

COLLAUD, M ;

NOWAK, S ;

KUTTEL, OM ;

GRONING, P ;

SCHLAPBACH, L .

APPLIED SURFACE SCIENCE, 1993, 72 (01) :19-29

[4] Plasma-surface interactions of model polymers for advanced photoresists using C4F8/Ar discharges and energetic ion beams [J].

Engelmann, S. ;

Bruce, R. L. ;

Kwon, T. ;

Phaneuf, R. ;

Oehrlein, G. S. ;

Bae, Y. C. ;

Andes, C. ;

Graves, D. ;

Nest, D. ;

Hudson, E. A. ;

Lazzeri, P. ;

Lacob, E. ;

Anderle, M. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04) :1353-1364

[5] INTERACTION OF LOW-ENERGY IONS (LESS-THAN-10 EV) WITH POLYMETHYLMETHACRYLATE DURING PLASMA TREATMENT [J].

GRONING, P ;

KUTTEL, OM ;

COLLAUDCOEN, M ;

DIETLER, G ;

SCHLAPBACH, L .

APPLIED SURFACE SCIENCE, 1995, 89 (01) :83-91

[6] Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC [J].

Hua, XF ;

Wang, X ;

Fuentevilla, D ;

Oehrlein, GS ;

Celii, FG ;

Kirmse, KHR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (05) :1708-1716

[7]

HUDSON EA, 2003, UNPUB P DRY PROC INT, V3, P253

[8]

*INT TECHN ROADM, 2006, LITHOGRAPHY

[9] Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist [J].

Kim, J ;

Chae, YS ;

Lee, WS ;

Shon, JW ;

Kang, CJ ;

Han, WS ;

Moon, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02) :790-794

[10] Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching [J].

Kim, Myeong-Cheol ;

Shamiryan, Denis ;

Jung, Youngjae ;

Boullart, Werner ;

Kang, Chang-Jin ;

Cho, Han-Ku .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06) :2645-2652

← 1 2 3 →