Structural and morphological changes of P3HT films in the planar geometry of an OFET device under an applied electric field

被引:10
作者
Grigorian, Souren [1 ]
Tranchida, Davide [3 ]
Ksenzov, Dmitriy [1 ]
Schaefers, Franz [2 ]
Schoenherr, Holger [3 ]
Pietsch, Ullrich [1 ]
机构
[1] Univ Siegen, D-57072 Siegen, Germany
[2] Helmholtz Ctr Berlin, D-12489 Berlin, Germany
[3] Univ Siegen, D-57068 Siegen, Germany
关键词
RSoXR; AFM; Organic semiconductors; Conducting polymer films; MOLECULAR-WEIGHT; EFFECT MOBILITY; HOLE MOBILITY; POLYTHIOPHENE; CRYSTALLINITY; DEPENDENCE;
D O I
10.1016/j.eurpolymj.2011.09.003
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We show that both the morphology and crystal structure of regioregular poly(3-hexylthiophene) (RR-P3HT) films in organic field effect transistor (OFET) devices with top surface contacts are altered, when an electric field is applied. Grazing incidence X-ray diffraction (GIXD) analysis reveals a dramatic decrease in structural order in the non-linear current regime and, by contrast, much less pronounced structural changes of the (h 00) peaks in the linear current regime. Using for the first time resonance soft X-ray reflectivity (RSoXR) on RR-P3HT to avoid radiation damaged and to enhance the scope of the attained depth resolved information, we show that these changes are located in a several tens of nanometer thin sub-surface layer of the active polymer in the device. Furthermore, the RSoXR data reveal that the changes are strongly related to the C 1s -> and C 1s sigma*-resonances. In situ AFM measurements of the RR-P3HT device surface support the reciprocal space analysis results by showing a substantial softening and lateral expansion of the RR-P3HT films, when 20 V are applied between the contacts. These morphological and structural changes are partially reversible in nature. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2189 / 2196
页数:8
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