Structural and electrical properties of a high-k SmAlO3 charge trapping flash memory

被引：5

作者：

Chen, Fa-Hsyang ^{[1
]}

Pan, Tung-Ming ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2012年 / 73卷 / 06期

关键词：

Oxides; Semiconductors; Dielectric properties; Electrical properties; NONVOLATILE MEMORY; SONOS; OXIDE; LAYER;

D O I：

10.1016/j.jpcs.2012.01.027

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, we proposed the Al/Al2O3/SmAlO3/SiO2/Si flash memory devices using high-k SmAlO3 film as a charge trapping layer and high-k Al2O3 film as a blocking layer. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopic and atomic force microscopy. The SmAlO3 flash memory devices annealed at 800 degrees C showed excellent electrical properties, such as a large memory window of similar to 2.61 V (measured at a sweep voltage range of +/- 5 V) and a small charge loss of similar to 7.1% (measured time up to 10(4) s). In addition, the charge trap centroid and charge trap density were extracted by constant current stress method. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：793 / 796

页数：4

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