Doped Mott insulator: Results from mean-field theory

被引：65
作者：
Kajueter, H
Kotliar, G
Moeller, G
机构：
[1] Department of Physics, Rutgers University, Piscataway
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.53.16214
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Mott transition phenomena can be studied systematically in the limit of large lattice spatial coordination. We investigate the properties of doped Mott insulators with a variety of techniques and compare our results with experiments on transition-metal oxides.
引用
收藏
页码：16214 / 16226
页数：13
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