Low frequency dielectric dispersion of Nd and V-doped bismuth titanate ceramics: Influence of doping on ferroelectric and electrical properties

To investigate the effects of Nd and V doping on Bi4Ti3O12 (BIT), (Bi3.25Nd0.75)Ti3O12 (BNT) and (Bi3.25Nd0.75)(Ti2.97V0.03)O-12 (BNTV) ceramics were prepared by using a solid state reaction method. Dielectric, ferroelectric and electrical properties were studied by using a complex dielectric constant, ferroelectric polarization-electric field (P-E) hysteresis loops and electrical conductivity, respectively. A strong low-frequency dielectric dispersion was remark-ably decreased by Nd and V doping, and the remanent polarization of BNT and BNTV ceramics increased. Compared to that of BIT and BNT ceramics, the conductivity of BNTV ceramics decreased as much as two orders of magnitude. The Nd and V doping on BIT must give a lower conductivity to improve the ferroelectric properties.