High-mobility oxide TFT for circuit integration of AMOLEDs

被引：42

作者：

Fukumoto, Eri ^{[1
]}

Arai, Toshiaki ^{[1
]}

Morosawa, Narihiro ^{[1
]}

Tokunaga, Kazuhiko ^{[1
]}

Terai, Yasuhiro ^{[1
]}

Fujimori, Takashige ^{[1
]}

Sasaoka, Tatsuya ^{[1
]}

机构：

[1] Sony Corp, Core Device Dev Grp, Atsugi Tec, Atsugi, Kanagawa 2430014, Japan

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2011年 / 19卷 / 12期

关键词：

Oxide TFT; ITZO; threshold voltage; circuit integration; OLED;

D O I：

10.1889/JSID19.12.867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-mobility and high-reliability oxide thin-film transistor (TFT) that uses In-Sn-Zn-O (ITZO) as a channel material has been developed. The mobility was 30.9 cm(2)/V-sec and the threshold voltage shift after 20,000 sec of a bias-temperature-stress (BTS) test (with a stress condition of V-g = 15 V, V-d = 15 V, and T = 50 degrees C) was smaller than 0.1 V. In addition, a method of obtaining a stable enhancement-type TFT, which realizes circuit integration for active-matrix organic light-emitting diode (AMOLED) displays has been developed.

引用

页码：867 / 872

页数：6

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