MD simulations of ion beam induced epitaxial crystallization at a-Si/c-Si interfaces:: interface structure and elementary processes of crystallization

被引：17

作者：

Weber, B ^{[1
]}

Stock, DM ^{[1
]}

Gärtner, K ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

molecular dynamics; amorphous-crystalline interfaces; Si; ion induced crystallization;

D O I：

10.1016/S0168-583X(98)00694-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Elementary processes of crystallization at a-Si/(001) c-Si interfaces are investigated by molecular dynamics simulations using the Stillinger-Weber and the Tersoff potential. The interface structure of differently prepared interface systems is investigated. It is shown that two special defect structures exist at the interfaces independent of the preparation conditions and the interaction potential used. These interface structures could be explained by different views of the bond defect in c-Si investigated by Cargnoni et al. (Phys. Rev. B 57 (1998) 170). Crystallization at the a-Si/c-Si interface takes place by bond rearrangements similar to the annealing of the bond defect in the Si crystal. These bond rearrangements could be induced by low energy recoils. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：375 / 380

页数：6

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