Electronegative oligothiophenes based on difluorodioxocyclopentene-annelated thiophenes: Synthesis, properties, and n-type FET performances

被引：78
作者：
Le, Yutaka [1 ]
Umemoto, Yoshikazu [1 ]
Okabe, Makoto [1 ]
Kusunoki, Takahiro [2 ]
Nakayama, Ken-ichi [2 ]
Pu, Yong-Jin [2 ]
Kido, Junji [2 ]
Tada, Hirokazu [3 ]
Aso, Yoshio [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Yamagata Univ, Grad Sch Sci & Engn, Dept Organ Device Engn, Yamagata 9928510, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
来源：
ORGANIC LETTERS | 2008年 / 10卷 / 05期
关键词：
D O I：
10.1021/ol7029678
中图分类号：
O62 [有机化学];
学科分类号：
070303 ; 081704 ;
摘要：
A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 x 10(-2) cm(2) V-1 s(-1).
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收藏
页码：833 / 836
页数：4
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