Methods for fast, reliable growth of Sn whiskers

被引：24

作者：

Bozack, M. J. ^{[1
]}

Snipes, S. K. ^{[1
]}

Flowers, G. N. ^{[1
]}

机构：

[1] Auburn Univ, Ctr Adv Vehicle & Extreme Environm Elect CAVE3, Auburn, AL 36849 USA

来源：

SURFACE SCIENCE | 2016年 / 652卷

关键词：

Whiskers; Tin; Growth; Sputtering; AES; TIN WHISKER;

D O I：

10.1016/j.susc.2016.01.010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report several methods to reliably grow dense fields of high-aspect ratio tin whiskers for research a period of days to weeks. The techniques offer marked improvements over previous means to grow which have struggled against the highly variable incubation period of tin whiskers and slow growth rate. of the film stress is the key to fast-growing whiskers, owing to the fact that whisker incubation and fundamentally a stress-relief phenomenon. The ability to grow high-density fields of whiskers in a reasonable period of time (days, weeks) has accelerated progress in whisker growth and development of whisker mitigation strategies. (C) 2016 Elsevier B.V. All rights

引用

页码：355 / 366

页数：12

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