Analysis of Modified Williamson-Hall Plots on GaN Layers

被引：11

作者：

Liu Jian-Qi ^{[1
,2
,3
]}

Qiu Yong-Xin ^{[1
]}

Wang Jian-Feng ^{[1
]}

Xu Ke ^{[1
]}

Yang Hui ^{[1
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 01期

基金：

中国国家自然科学基金;

关键词：

X-RAY-DIFFRACTION; THIN-FILMS; GROWTH;

D O I：

10.1088/0256-307X/28/1/016101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Williamson-Hall (W-H) analysis is often used to separate the lateral coherence length (LCL) broadening and dislocation broadening on the omega-scan with a Lorentzian distribution. However, besides the LCL broadening and dislocation broadening, curvature also can broaden the omega-scan peak. Usually, the omega-scan can be described by a Pseudo-Voigt (P-V) function more precisely than a Lorentzian function. Based on the P-V fit peak profile, we modify the W-H plots. Both LCL broadening and curvature broadening can be eliminated from (00l ) omega-scans plots simultaneously, and a reliable tilt can be obtained. This method is a good complementary for the existing method, but is more convenient. Although we focuse on GaN layers, the results are applicable to a wide range of other materials having mosaic structures.

引用

页数：4

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