Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

被引：19

作者：

Gao, Feng ^{[1
]}

Luo, Shuai ^{[1
]}

Ji, Hai-Ming ^{[1
]}

Liu, Song-Tao ^{[1
]}

Xu, Feng ^{[1
]}

Lv, Zun-Ren ^{[1
]}

Lu, Dan ^{[1
]}

Ji, Chen ^{[1
]}

Yang, Tao ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2016年 / 28卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Quantum dots; semiconductor lasers; laser mode locking; WAVELENGTH; GENERATION; DYNAMICS; GAIN;

D O I：

10.1109/LPT.2016.2561302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an ultrashort pulse and high power single-section mode-locked laser using chirped multiple InAs/InP quantum dot (QD) layers as the active region of the laser. The chirped QD active region consists of seven layers of InAs QDs of different heights, which is beneficial in broadening the material gain spectrum. A transform-limited Gaussian pulse with a pulse duration of 322 fs is obtained from a device of 1 mm in length. Moreover, the femtosecond pulse with highest peak power of 6.8 W is achieved for the 45.5-GHz mode-locked laser. These results show the potential of the mode-locked laser for femtosecond pulse generation with high peak power and high repetition rate in the 1.55-mu m wavelength band.

引用

页码：1481 / 1484

页数：4

共 24 条

[1] Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications [J].

Avrutin, EA ;

Marsh, JH ;

Portnoi, EL .

IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (04) :251-278

[2] Ultrafast carrier dynamics in InGaAs quantum dot materials and devices [J].

Borri, Paola ;

Schneider, Stephan ;

Langbein, Wolfgang ;

Bimberg, Dieter .

JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2006, 8 (04) :S33-S46

[3] Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure [J].

Chen, S. M. ;

Zhou, K. J. ;

Zhang, Z. Y. ;

Childs, D. T. D. ;

Hugues, M. ;

Ramsay, A. J. ;

Hogg, R. A. .

APPLIED PHYSICS LETTERS, 2012, 100 (04)

[4] Ultrawide band quantum dot light emitting device by postfabrication laser annealing [J].

Chia, C. K. ;

Chua, S. J. ;

Dong, J. R. ;

Teo, S. L. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[5] Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE [J].

Gao, Feng ;

Luo, Shuai ;

Ji, Hai-Ming ;

Liu, Song-Tao ;

Lu, Dan ;

Ji, Chen ;

Yang, Tao .

OPTICS COMMUNICATIONS, 2016, 370 :18-21

[6] Time-resolved amplified spontaneous emission in quantum dots [J].

Gomis-Bresco, J. ;

Dommers-Voelkel, S. ;

Schoeps, O. ;

Kaptan, Y. ;

Dyatlova, O. ;

Bimberg, D. ;

Woggon, U. .

APPLIED PHYSICS LETTERS, 2010, 97 (25)

[7] Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height [J].

Haffouz, S. ;

Barrios, P. J. ;

Normandin, R. ;

Poitras, D. ;

Lu, Z. .

OPTICS LETTERS, 2012, 37 (06) :1103-1105

[8] Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 μm [J].

Heck, Martijn J. R. ;

Bente, Erwin A. J. M. ;

Smalbrugge, Barry ;

Oei, Yok-Siang ;

Smit, Meint K. ;

Anantathanasarn, Sanguan ;

Notzel, Richard .

OPTICS EXPRESS, 2007, 15 (25) :16292-16301

[9] Orthogonal control of the frequency comb dynamics of a mode-locked laser diode [J].

Holman, KW ;

Jones, DJ ;

Ye, J ;

Ippen, EP .

OPTICS LETTERS, 2003, 28 (23) :2405-2407

[10] Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission [J].

Khan, M. Z. M. ;

Ng, T. K. ;

Lee, Chi-Sen ;

Bhattacharya, P. ;

Ooi, B. S. .

APPLIED PHYSICS LETTERS, 2013, 102 (09)

← 1 2 3 →