Radiative Recombination of Bound Excitons in MoSe2:I2 Layered Crystals

被引：0

作者：

Siminel, N. ^{[1
]}

Nedelea, V. ^{[1
,2
]}

Sushkevich, K. ^{[1
,2
]}

Siminel, A. ^{[1
]}

Micu, A. ^{[1
]}

Kulyuk, L. ^{[1
]}

机构：

[1] Inst Appl Phys, Acad St 5, Kishinev 2028, Moldova

[2] Moldova State Univ, Mateevici St 60, Kishinev 2009, Moldova

来源：

4TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING, ICNBME-2019 | 2020年 / 77卷

关键词：

Transition metal dichalcogenides; Molybdenum diselenide; Layered crystals; Intercalation; Luminescence; Bound excitons; TRANSITION-METAL DICHALCOGENIDES; BAND-STRUCTURE; SEMICONDUCTORS; SPECTROSCOPY;

D O I：

10.1007/978-3-030-31866-6_55

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

The steady-state and time-resolved photoluminescence (PL) of excitons bound on intercalated iodine molecules was studied for the first time in MoSe2:I-2 layered single crystals. Along with narrow exciton spectral lines located near the energy of the MoSe2 indirect bandgap in the region of 0.98-1.06 eV, an IR broadband radiation centered at 0.78 eV and caused by the recombination of photoexcited carriers through the intrinsic lattice defects were found. To describe the temperature dependences of the intensity of steady-state PL, as well as its temporal characteristics, a kinetic model was proposed that takes into account the radiative and non-radiative recombination channels present in this quasi-two-dimensional semiconductor.

引用

页码：279 / 283

页数：5

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