A 21-26-GHz SiGe bipolar power amplifier MMIC

被引：66

作者：

Cheung, TSD ^{[1
]}

Long, JR

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[2] Delft Univ Technol, ERL, DIMES, NL-2628 CD Delft, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 12期

关键词：

balun; microwave power amplifiers; millimeter-wave power amplifiers; MMIC power amplifiers; monolithic transformer; SiGe; SiGe power amplifiers; silicon-germanium;

D O I：

10.1109/JSSC.2005.857424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-stage 21-26-GHz medium-power amplifier fabricated in f(T) = 120 GHz 0.2 mu m SiGe HET technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 24 dBin, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BVCEO of the transistors (1.8 V). New on-chip components, such as on-chip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45 x 2.45 mm(2) MMIC was mounted as a flipchip and tested without a heatsink.

引用

页码：2583 / 2597

页数：15

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