Optical absorption and spectrophotometric studies on the optical constants and dielectric of poly (o-toluidine) (POT) films grown by spin coating deposition

被引:67
作者
Farag, A. A. M. [1 ]
Ashery, A. [2 ]
Shenashen, M. A. [3 ]
机构
[1] Ain Shams Univ, Thin Film Lab, Dept Phys, Fac Educ, Cairo 11757, Egypt
[2] Natl Res Ctr, Dept Phys, Cairo, Egypt
[3] Egyptian Petr Res Inst, Cairo, Egypt
关键词
poly(o-toluidine); Fourier transform infrared (FTIR); Optical dispersion parameters; Dielectric constants; THIN-FILMS; ELECTROCHEMICAL SYNTHESIS; POLY(O-TOLUIDINE); BEHAVIOR; CDTE; DISPERSION; OXIDE; ION;
D O I
10.1016/j.physb.2012.03.034
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, a poly(o-toluidine) "POT" was synthesized by chemical oxidative polymerization method in aqueous media. High uniform and good adhesion thin films of POT have been successfully deposited by the spin coating technique. The films were characterized by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The XRD pattern of the POT shows the semi-crystalline nature of the films. FTIR studies show the information of functional groups in POT. The optical transmittance and reflectance of POT film was measured in the 200-2500 nm wavelength range. The absorption coefficient analysis shows that the optical band gaps of POT film are direct allowed transition band gaps with 1.2 and 2.6 eV. Other optical absorption parameters such as extinction molar coefficient, oscillator strength and electric dipole strength were also calculated. The dispersion parameters were determined and discussed based on the single oscillator model. According to the analysis of dispersion curves some important parameters such as dispersion energy (E-d), oscillator energy (E-o), high frequency dielectric constant (epsilon(infinity)) and lattice dielectric constant (epsilon(L)) were also evaluated. Discussion of the obtained results and their comparison with the previous published data were also given. The obtained desirable results of POT thin film can be useful for the optoelectronic applications. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:2404 / 2411
页数:8
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