Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

被引：98

作者：

Jain, R. ^{[1
]}

Sun, W. ^{[1
]}

Yang, J. ^{[1
]}

Shatalov, M. ^{[1
]}

Hu, X. ^{[1
]}

Sattu, A. ^{[1
]}

Lunev, A. ^{[1
]}

Deng, J. ^{[1
]}

Shturm, I. ^{[1
]}

Bilenko, Y. ^{[1
]}

Gaska, R. ^{[1
]}

Shur, M. S. ^{[2
]}

机构：

[1] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[2] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2969402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of low-defect thick films of AlN and AlGaN on trenched AlGaN/sapphire templates using migration enhanced lateral epitaxial overgrowth. Incoherent coalescence-related defects were alleviated by controlling the tilt angle of growth fronts and by allowing Al adatoms sufficient residence time to incorporate at the most energetically favorable lattice sites. Deep ultraviolet light emitting diode structures (310 nm) deposited over fully coalesced thick AlN films exhibited cw output power of 1.6 mW at 50 mA current with extrapolated lifetime in excess of 5000 hours. The results demonstrate substantial improvement in the device lifetime, primarily due to the reduced density of growth defects. (c) 2008 American Institute of Physics.

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页数：3

相关论文

共 16 条

[1] Novel aspects of the growth of nitrides by MOVPE [J].

Amano, H ;

Akasaki, I .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) :6935-6944

[2] Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy [J].

Balakrishnan, Krishnan ;

Bandoh, Akira ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (12-16) :L307-L310

[3] Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates [J].

Chen, Z. ;

Fareed, R. S. Qhalid ;

Gaevski, M. ;

Adivarahan, V. ;

Yang, J. W. ;

Khan, Asif ;

Mei, J. ;

Ponce, F. A. .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[4]

FAREED Q, 2007, Patent No. 7192849

[5] High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition [J].

Fareed, RSQ ;

Jain, R ;

Gaska, R ;

Shur, MS ;

Wu, J ;

Walukiewicz, W ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (11) :1892-1894

[6] In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers [J].

Figge, S ;

Böttcher, T ;

Einfeldt, S ;

Hommel, D .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 :262-266

[7] Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template [J].

Gogova, D ;

Kasic, A ;

Larsson, H ;

Hemmingsson, C ;

Monemar, B ;

Tuomisto, F ;

Saarinen, K ;

Dobos, L ;

Pécz, B ;

Gibart, P ;

Beaumont, B .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :799-806

[8] Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire [J].

Gong, Z ;

Gaevski, M ;

Adivarahan, V ;

Sun, W ;

Shatalov, M ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[9] Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates [J].

Heikman, S ;

Keller, S ;

Newman, S ;

Wu, Y ;

Moe, C ;

Moran, B ;

Schmidt, M ;

Mishra, UK ;

Speck, JS ;

DenBaars, SP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (12-15) :L405-L407

[10] Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1-xN [J].

Katona, TM ;

Cantu, P ;

Keller, S ;

Wu, Y ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :5025-5027