A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

In this study, we propose a novel logic to obtain max/min in-memory computing. The one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) is used in this study in order to provide steady and good electrical characteristics. By changing the gate voltage, the RRAM can achieve multiple resistance states. Using this property, different digital signals can be defined as different resistance states of RRAM. Moreover, max and min logic computing can be completed by only one 1T1R device using the set and reset process in RRAM. In addition, we use pulse measurements to compare the set and reset process switching times during computation. The results show that the set process can achieve a faster switching time than can the reset process. Both operations not only complete the max/min logic computing but also simplify the logic circuit and increase the device density, providing a significant advantage for the in-memory computing field.