Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

被引：2
|
作者：
Chang, Wen Hsin [1 ]
Wan, Hsien-Wen [2 ,3 ]
Cheng, Yi-Ting [2 ,3 ]
Lin, Yen-Hsun G. [2 ,3 ]
Irisawa, Toshifumi [1 ]
Ishii, Hiroyuki [1 ]
Kwo, Jueinai [4 ]
Hong, Minghwei [2 ,3 ]
Maeda, Tatsuro [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan
[4] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / SC期
关键词：
GeOI; ELO; 111; Ge; GERMANIUM; 111; GATE STACK; TECHNOLOGY; DEPOSITION; INSULATOR; MOBILITY; SURFACE; IMPACT; LAYERS;
D O I：
10.35848/1347-4065/ac3fca
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Germanium-on-insulator (GeOI) structures with a surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.
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页数：4
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