Low-temperature growth of In-assisted silicon nanowires

被引：16

作者：

Convertino, Annalisa ^{[1
]}

Cuscuna, Massimo ^{[1
]}

Nicotra, Giuseppe ^{[2
]}

Spinella, Corrado ^{[2
]}

Felisari, Laura ^{[3
]}

Fortunato, Guglielmo ^{[1
]}

Martelli, Faustino ^{[1
]}

机构：

[1] CNR, Ist Microelettron & Microsistemi, I-00133 Rome, Italy

[2] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

[3] CNR, Lab TASC, Ist Officina Mat, I-34149 Trieste, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 335卷 / 01期

关键词：

Crystal structure; Nanostructures; Chemical vapor depositions processes; Semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2011.09.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium-assisted silicon nanowires have been grown by plasma enhanced chemical vapor deposition at temperatures down to 330 degrees C without plasma pre-treatment of the In films deposited on silicon substrates before the growth. Two families of wires have been observed: thin, tapered wires that show a metallic nanoparticle at their top, and thick, almost cylindrical wires that have no metallic nanoparticle at their final end. We suggest that the two types of NWs grow after different mechanisms. Moreover, we point out important growth features that are common with Au- and self-induced nanowires. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：10 / 16

页数：7

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