Few layered MoS2 lithography with an AFM tip: description of the technique and nanospectroscopy investigations

被引：22

作者：

Donarelli, M. ^{[1
]}

Perrozzi, F. ^{[1
]}

Bisti, F. ^{[1
]}

Paparella, F. ^{[1
]}

Feyer, V. ^{[2
]}

Ponzoni, A. ^{[3
]}

Gonchigsuren, M. ^{[4
]}

Ottaviano, L. ^{[1
,5
]}

机构：

[1] Univ Aquila, Dept Phys & Chem Sci, I-67100 Laquila, Italy

[2] NanoESCA Beamline, Sincrotrone Trieste SCpA, I-34012 Trieste, Italy

[3] CNR INO Brescia, I-25123 Brescia, Italy

[4] MUST, Sch Appl Sci, Bagatoiruu 14191, Ulaanbaatar, Mongolia

[5] UOS LAquila, CNR SPIN, I-67100 Laquila, Italy

来源：

NANOSCALE | 2015年 / 7卷 / 26期

关键词：

ACTIVE EDGE SITES; FORCE MICROSCOPY; LOCAL OXIDATION; SILICON SURFACES; EVOLUTION;

D O I：

10.1039/c5nr02337h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel technique to lithograph the MoS2 surface is described here. Mechanically exfoliated MoS2 flakes have been patterned with an atomic force microscope tip. After the patterning process, the lithographed areas have been removed by selective chemical etching. The electronic properties of the MoS2 flakes have been analyzed with spatially resolved photoelectron spectroscopy, with tunable incident photon energy, provided by a synchrotron light source. Tens of meV core level shifts can be recorded in relation to the flakes edges, coming from both the exfoliation and from the lithography.

引用

页码：11453 / 11459

页数：7

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