Design and characterization of electrically pumped vertical external cavity surface emitting lasers

被引：0

作者：

Orchard, J. R. ^{[1
]}

Childs, D. T. D. ^{[1
]}

Lin, L. C. ^{[1
]}

Stevens, B. J. ^{[1
]}

Williams, D. M. ^{[1
]}

Hogg, R. A. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Ctr Nanosci & Technol, Sheffield S3 7HQ, S Yorkshire, England

来源：

VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) | 2011年 / 7919卷

关键词：

Electrically pumped; VECSEL; Semiconductor disk laser; VCSEL; Power scaling; SERIES RESISTANCE; HIGH-POWER; DIODE; REDUCTION; REFLECTOR; OPERATION;

D O I：

10.1117/12.875126

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The design of electrically pumped vertical external cavity surface emitting lasers ( EP-VECSELs) for high power applications require a number of optimisations in design trade-offs, mainly that of doping for improved electrical performance and optical loss. Devices with diameter greater than 70 mu m and current spreading layer thickness of 100 mu m suffer from non-uniform carrier injection into the active region, below this diameter output power scales linearly with device area. We show CW powers of 133mW from a 150 mu m device with 4x10(17) cm(-3) substrate doping at 0 degrees C can be obtained.

引用

页数：9

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