Evaluation of p-n junction position and channel length in Si devices with resolution of a few nanometers by low-energy EBIC

被引:8
作者
Kittler, M [1 ]
Lärz, J [1 ]
机构
[1] Inst Semicond Phys, DE-15230 Frankfurt, Germany
关键词
low-energy EBIC; p-n junction position; channel length; 2D dopant distribution;
D O I
10.4028/www.scientific.net/SSP.63-64.77
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The accuracy for determining the depth position of p-n junctions by low-energy EBIC (electron-beam-induced current) is shown to be better than 10 nm, whereas according to the widely accepted view the EBIC resolution is expected to be much worse. Shallow bevel angles (about 1 degrees) must be used for this purpose, which have to be subjected to a surface treatment leading to a very large surface recombination velocity. The channel length of field effect transistors (FET) can be determined with an accuracy of about 10 nm by using Schottky barrier EBIC. All non-semiconducting layers on top of the FET have to be removed, and a thin metal layer deposited to form a Schottky depletion layer on the channel region. The contour of the source and drain regions can also be imaged by Schottky EBIC when shallow bevel angles are used. We believe that a better spatial resolution should be possible, if an improved low-energy electron probe is used. Consequently, applicability of the method for transistors with channel lengths down to about 100 nm is anticipated. To what extent the spatial 2D distribution of dopants can be extracted from the distribution of the EBIC signal has still to be answered by model calculations.
引用
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页码:77 / 87
页数:11
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