Ultrafast carrier dynamics in single ZnO nanowire and nanoribbon lasers

被引：309
作者：
Johnson, JC
Knutsen, KP
Yan, HQ
Law, M
Zhang, YF
Yang, PD
Saykally, RJ [1 ]
机构：
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA USA
来源：
NANO LETTERS | 2004年 / 4卷 / 02期
关键词：
D O I：
10.1021/nl034780w
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Time-resolved second-harmonic generation (TRSHG) and transient photoluminescence (PL) spectroscopy are utilized to probe the ultrafast creation and subsequent relaxation of excited carriers immediately following band-gap excitation in single ZnO nanowire and nanoribbon lasers. The TRSHG signal consists of a 1-5 ps recovery present only during strong lasing and a 10-80 ps intensity-dependent component. The transient PL response from single structures exhibits an 80 ps decay component independent of pump power (free exciton PL), and a < 10 ps power-dependent component (stimulated emission) that shifts to earlier delay by ca. 10 ps at high pump fluence.
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收藏
页码：197 / 204
页数：8
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