Ultrafast carrier dynamics in single ZnO nanowire and nanoribbon lasers

被引：309

作者：

Johnson, JC

Knutsen, KP

Yan, HQ

Law, M

Zhang, YF

Yang, PD

Saykally, RJ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA USA

来源：

NANO LETTERS | 2004年 / 4卷 / 02期

关键词：

D O I：

10.1021/nl034780w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Time-resolved second-harmonic generation (TRSHG) and transient photoluminescence (PL) spectroscopy are utilized to probe the ultrafast creation and subsequent relaxation of excited carriers immediately following band-gap excitation in single ZnO nanowire and nanoribbon lasers. The TRSHG signal consists of a 1-5 ps recovery present only during strong lasing and a 10-80 ps intensity-dependent component. The transient PL response from single structures exhibits an 80 ps decay component independent of pump power (free exciton PL), and a < 10 ps power-dependent component (stimulated emission) that shifts to earlier delay by ca. 10 ps at high pump fluence.

引用

收藏

页码：197 / 204

页数：8

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