Metal pattern resolution for fine electrode formation using selective metal-vapor deposition using photochromic diarylethene

被引:1
|
作者
Tsujioka, Tsuyoshi [1 ]
Ishida, Shoko [1 ]
机构
[1] Osaka Kyoiku Univ, Asahigaoka 4-698-1, Osaka 5828582, Japan
关键词
photochromism; selective metal-vapor deposition; organic electronics; organic surface; vacuum evaporation; metal pattern; MEMORY; TRANSISTORS; LIGHT; CRYSTALS; SURFACES; BEHAVIOR; DEVICE; FILMS;
D O I
10.35848/1347-4065/ab8d50
中图分类号
O59 [应用物理学];
学科分类号
摘要
Selective metal-vapor deposition using photochromic diarylethene (DAE) enables the formation of fine metal patterns for various organic devices by maskless vacuum deposition. We investigated the resolution of fine metal patterns generated by selective Mg-vapor deposition. A DAE layer on a photomask substrate generated a corresponding fine isomerization pattern by UV-irradiation through the substrate. A clear Mg pattern was formed for the isomerization width with a resolution of a 10 mu m level by maskless Mg deposition but a blurred Mg pattern was obtained on the line and space isomerization patterns with a several-mu m level; no-Mg deposition was observed at the edge of the colored area. This is because Mg atoms diffuse a distance of several microns on the colored surface. The diffusion distance depended on a glass transition temperature (Tg) of the colored surface and a DAE film with a higher Tg in the colored state would enable higher metal-pattern resolution.
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页数:6
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