GaN Single Nanowire p-i-n Diode for High-Temperature Operations

被引：13

作者：

Zou, Xinbo ^{[1
,2
]}

Zhang, Xu ^{[1
]}

Zhang, Yu ^{[2
]}

Lyu, Qifeng ^{[1
]}

Tang, Chak Wah ^{[1
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, ECE Dept, Kowloon, Hong Kong 999077, Peoples R China

[2] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2020年 / 2卷 / 03期

关键词：

GaN; p-i-n diode; nanowires; high temperature; TCAD simulation; top-down method; UV detection; DIAMOND;

D O I：

10.1021/acsaelm.9b00801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

III- Nitride single nanowire (NW)-based p-i-n diode was fabricated using a top-down etching method and its electrical and optoelectronic characteristics were investigated from room temperature to high operation temperatures up to 150 degrees C. The NW p-i-n diode exhibited good rectifying I-V properties at all measurement temperatures and the forward current could be further enhanced when the temperature was increased. Simulation-based data fitting revealed that the enhanced conduction was a result of increased carrier concentration inside the NW, especially holes in the drift layer, as well as reduced contact resistance. The reverse leakage current was kept low even at elevated temperatures so that the UV (similar to 365 nm) responsivity remained high for a wide temperature range, suggesting the feasibility of NW p-i-n diode for rectifying purposes and UV photon detection applications in high-temperature environments.

引用

页码：719 / 724

页数：6

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