Extremely large magnetoresistance in boron-doped silicon

被引：91

作者：

Schoonus, J. J. H. M. ^{[1
]}

Bloom, F. L. ^{[1
]}

Wagemans, W. ^{[1
]}

Swagten, H. J. M. ^{[1
]}

Koopmans, B. ^{[1
]}

机构：

[1] Univ Technol, Dept Appl Phys, Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.100.127202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Boron-doped Si-SiO2-Al structures are fabricated to study extremely large magnetoresistance (MR) effects. Current-voltage characteristics show a nonlinear behavior, dominated by an autocatalytic process of impact ionization. At low temperatures, the magnetic field postpones the onset of impact ionization to higher electric fields. This results in a symmetric positive MR of over 10 000% at 400 kA/m. Applying a magnetic field leads to an increase of the acceptor level compared to the valence band as deduced by admittance spectroscopy. A macroscopic transport model is introduced to describe how the MR is controlled by voltage, electrode spacing, and oxide thickness.

引用

页数：4

共 21 条

[1] Electronic measurement and control of spin transport in silicon [J].

Appelbaum, Ian ;

Huang, Biqin ;

Monsma, Douwe J. .

NATURE, 2007, 447 (7142) :295-298

[2] ENERGY-LEVELS IN SILICON [J].

CHEN, JW ;

MILNES, AG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228

[3] Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors [J].

Chen, MC ;

Ku, SH ;

Chan, CT ;

Wang, TH .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) :2297-2300

[4] EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS [J].

COHEN, ME ;

LANDSBERG, PT .

PHYSICAL REVIEW, 1967, 154 (03) :683-+

[5] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[6]

GODIK EE, 1965, SOV PHYS-SOLID STATE, V6, P1870

[7] ADMITTANCE MEASUREMENTS OF MAGNETIC FREEZEOUT IN N(-)-TYPE GAAS [J].

HICKMOTT, TW .

PHYSICAL REVIEW B, 1992, 46 (19) :12342-12352

[8] 1D-simulation results of indirect-driven target optimization for ignition at Iskra-6 facility [J].

Karlykhanov, NG ;

Lykov, VA ;

Timakova, MS ;

Chizhkov, MN .

JETP LETTERS, 2004, 79 (01) :25-27

[9] NEGATIVE MAGNETORESISTANCE OF P-TYPE SILICON IN IMPURITY CONDUCTION RANGE AT MICROWAVE FREQUENCIES [J].

KOBAYASHI, M ;

TANAKA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (07) :1246-&

[10] Metal-insulator transition in two-dimensional electron systems [J].

Kravchenko, SV ;

Sarachik, MP .

REPORTS ON PROGRESS IN PHYSICS, 2004, 67 (01) :1-44

← 1 2 3 →