Atomic Structure of (Ge0.2Se0.8)85B15 and (Ge0.2Se0.8)85In15 Glasses

被引：1

作者：

Kaban, Ivan ^{[1
]}

Jovari, P. ^{[2
]}

Petkova, T. ^{[3
]}

Petkov, Plamen ^{[4
]}

Stoilova, A. ^{[4
]}

Beuneu, B. ^{[5
]}

Hoyer, W. ^{[6
]}

Mattern, N. ^{[1
]}

Eckert, J. ^{[1
]}

机构：

[1] IFW Dresden, Inst Complex Mat, POB 270116, D-01171 Dresden, Germany

[2] Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

[3] Bulgarian Acad Sci, Inst Electrochem & Energy Syst, BU-1113 Sofia, Bulgaria

[4] Univ Chem Technol & Met, Dept Phys, Thin Film Technol Lab, BU-1756 Sofia, Bulgaria

[5] CEA Saclay, Lab Leon Brillouin, F-91191 Gif Sur Yvette, France

[6] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

来源：

NANOTECHNOLOGICAL BASIS FOR ADVANCED SENSORS | 2010年

基金：

欧盟第七框架计划;

关键词：

Boron Chalcogenide glasses; Germanium selenide; Indium;

D O I：

10.1007/978-94-007-0903-4_20

中图分类号：

Q6 [生物物理学];

学科分类号：

071011 ;

摘要：

The atomic structure of (Ge0.2Se0.8)(85)B-15 and (Ge0.2Se0.8)(85)In-15 chalcogenide glasses has been studied with X-ray diffraction, neutron diffraction and extended X-ray absorption fine structure measurements. The reverse Monte Carlo simulation technique has been used for the generation of atomic configurations satisfying the experimental data sets and some constraints. The models obtained are analyzed in terms of partial pair distribution functions, most probable interatomic distances and coordination numbers.

引用

页码：195 / +

页数：2

共 28 条

[1] Slab waveguides and nanoscale patterning of pulsed laser-deposited Ge0.2Se0.8 chalcogenide films
Liu, W. C.
Hoffman, G.
Zhou, W.
Reano, R. M.
Boolchand, P.
Sooryakumar, R.
APPLIED PHYSICS LETTERS, 2008, 93 (04)
[2] Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure
Debanjan Jana
Somsubhra Chakrabarti
Sheikh Ziaur Rahaman
Siddheswar Maikap
Nanoscale Research Letters, 2015, 10
[3] Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
Rahaman, S. Z.
Maikap, S.
MICROELECTRONICS RELIABILITY, 2010, 50 (05) : 643 - 646
[4] Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure
Jana, Debanjan
Chakrabarti, Somsubhra
Rahaman, Sheikh Ziaur
Maikap, Siddheswar
NANOSCALE RESEARCH LETTERS, 2015, 10
[5] Bend Loss Characterization of Direct Write Rib Waveguides Induced in Ge0.2Se0.8 Chalcogenide Glass using Electron Beams
Hoffman, Galen B.
Reano, Ronald M.
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2, 2009, : 332 - 333
[6] Atomic structure of amorphous and crystallized Ge15Sb85
Zalden, Peter
Bichara, Christophe
van Eijk, Julia
Braun, Carolin
Bensch, Wolfgang
Wuttig, Matthias
JOURNAL OF APPLIED PHYSICS, 2010, 107 (10)
[7] DIFFERENTIAL SCANNING CALORIMETRY STUDY OF STRUCTURAL RELAXATION OF GE-DOPED SE85TE15 GLASSES
ILLEKOVA, E
CLAVAGUERAMORA, MT
BARO, MD
SURINACH, S
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3): : 181 - 190
[8] Differential scanning calorimetry study of structural relaxation of Ge-doped Se85Te15 glasses
Illekova, E.
Clavaguera-Mora, M.T.
Baro, M.D.
Surinach, S.
Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B22 (2-3): : 181 - 190
[9] Activation energy of Se2Ge0.2Sb0.8 chalcogenide glass by differential scanning calorimetry
Abousehly, AEM
JOURNAL OF THERMAL ANALYSIS, 1996, 46 (01): : 177 - 186
[10] Influence of annealing temperature on microstructures and optical properties of CuGa0.8Ge0.2Se2 films
Xiao, Lingling
Ding, Tiezhu
Zheng, Pingping
Fan, Yue
Bo, Qingrui
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2015, 35 (01): : 23 - 26

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