Influence of minimum position in [Ga]/([Ga] plus [In]) profile of Cu(In,Ga) Se2 on flexible stainless steel substrate on its photovoltaic performances

被引:15
作者
Chantana, Jakapan [1 ]
Watanabe, Taichi [2 ]
Teraji, Seiki [2 ]
Minemoto, Takashi [1 ]
机构
[1] Ritsumeikan Univ, Dept Elect & Elect Engn, 1-1-1Nojihigashi, Kusatsu, Shiga 5258577, Japan
[2] Nitto Denko Corp, Environm & Energy Res Ctr, 2-8 Yamadaoka, Suita, Osaka 5650871, Japan
关键词
Cu(In; Ga)Se-2 solar cell; Ga]/([Ga] plus [In]) profile; Near-surface [Ga]/([Ga] plus [In]); Minimum [Ga]/([Ga] plus [In]) position; Stainless steel substrate; FILM SOLAR-CELLS; PRECURSOR METHOD; GA) PROFILE; THIN-FILMS; ABSORBER; IMPROVEMENT; EFFICIENCY;
D O I
10.1016/j.solmat.2016.07.048
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Cu(In, Ga)Se-2 (CIGS) solar cells on stainless steel (SUS) substrates are fabricated with various [Ga]/([Ga]+[In]), GGI, profiles in their absorbers. From GGI profiles, near-surface GGI is defined as average GGI within 200 nm from CIGS surface, mini GGI value is the lowest GGI, and mini GGI position is a distance between the lowest GGI position and CIGS surface. These are used as representatives of the GGI profile. Their impacts on cell performances are quantitatively examined. It is revealed that near-surface GGI is optimized in a range of approximately 0.40-0.45 (or band-gap energy of 1.28-130 eV), resulting in improvement of conduction band offset at CdS/CIGS interface. From simulation, optimized mini GGI position is in a range of 250-350 nm, well consistent with space charge region width. According to experimental results, fill factor and open-circuit voltage are increased when mini GGI position is decreased from 1.1 to 0.4 mu m, while short-circuit current density is increased with decreasing mini GGI value. Ultimately, 17.3%-efficient CIGS solar cell on flexible SUS substrate with thin CIGS thickness of 1.5 mu m is achieved, where near-surface GGI, mini GGI position, and mini GGI value are 0.42, 0.5 mu m, and 0.06, respectively. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:750 / 756
页数:7
相关论文
共 36 条
  • [1] Bhattacharya P., 1994, SEMICONDUCTOR OPTOEL
  • [2] Modelling polycrystalline semiconductor solar cells
    Burgelman, M
    Nollet, P
    Degrave, S
    [J]. THIN SOLID FILMS, 2000, 361 : 527 - 532
  • [3] Chantana J, 2015, Development of Cu(In,Ga)Se2 Solar Cell on Stainless Steel Substrates
  • [4] Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi-layer precursor method: its photovoltaic performance and deep-level defects
    Chantana, Jakapan
    Hironiwa, Daisuke
    Watanabe, Taichi
    Teraji, Seiki
    Minemoto, Takashi
    [J]. PROGRESS IN PHOTOVOLTAICS, 2016, 24 (07): : 990 - 1000
  • [5] Physical properties of Cu(In,Ga)Se2 film on flexible stainless steel substrate for solar cell application: A multi-layer precursor method
    Chantana, Jakapan
    Hironiwa, Daisuke
    Watanabe, Taichi
    Teraji, Seiki
    Minemoto, Takashi
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 143 : 510 - 516
  • [6] Controlled back slope of Ga/(In plus Ga) profile in Cu(In,Ga)Se2 absorber fabricated by multi layer precursor method for improvement of its photovoltaic performance
    Chantana, Jakapan
    Hironiwa, Daisuke
    Watanabe, Taichi
    Teraji, Seiki
    Kawamura, Kazunori
    Minemoto, Takashi
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 133 : 223 - 228
  • [7] Investigation of Cu(In,Ga)Se2 absorber by time-resolved photoluminescence for improvement of its photovoltaic performance
    Chantana, Jakapan
    Hironiwa, Daisuke
    Watanabe, Taichi
    Teraji, Seiki
    Kawamura, Kazunori
    Minemoto, Takashi
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 130 : 567 - 572
  • [8] Impact of Ga/(In plus Ga) profile in Cu(In,Ga)Se2 prepared by multi-layer precursor method on its cell performance
    Chantana, Jakapan
    Murata, Masashi
    Higuchi, Takashi
    Watanabe, Taichi
    Teraji, Seiki
    Kawamura, Kazunori
    Minemoto, Takashi
    [J]. THIN SOLID FILMS, 2014, 556 : 499 - 502
  • [9] Chirila A., 2010, 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), P000656, DOI 10.1109/PVSC.2010.5616887
  • [10] Chirila A, 2013, NAT MATER, V12, P1107, DOI [10.1038/NMAT3789, 10.1038/nmat3789]