Resonant Raman scattering in ZnO:Mn and ZnO:Mn:Al thin films grown by RF sputtering

被引：28

作者：

Cerqueira, M. F. ^{[1
]}

Vasilevskiy, M. I. ^{[1
]}

Oliveira, F. ^{[1
]}

Rolo, A. G. ^{[1
]}

Viseu, T. ^{[1
]}

Ayres de Campos, J. ^{[1
]}

Alves, E. ^{[2
]}

Correia, R. ^{[3
]}

机构：

[1] Univ Minho, Ctr Fis, P-4710057 Braga, Portugal

[2] Ion Beam Lab, ITN, P-2686953 Sacavem, Portugal

[3] Univ Aveiro, Dept Fis & I3N, P-3710193 Aveiro, Portugal

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 33期

关键词：

LUMINESCENCE; PHOTOLUMINESCENCE; SPECTROSCOPY; CRYSTALS; CDS;

D O I：

10.1088/0953-8984/23/33/334205

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman spectroscopy results obtained under visible (non-resonant) and UV (resonant) excitation for nanocrystalline ZnO, ZnO:Mn and ZnO:Mn:Al thin films grown by radio frequency magnetron sputtering are presented and compared. The origin of the multiple longitudinal optical (LO) phonon Raman peaks, strongly enhanced under resonance conditions, and the effects of the dopants on them are discussed in the framework of the 'cascade' model. It is suggested that the observed suppression of the higher-order LO phonon lines for ZnO:Mn:Al is caused by the dissociation of excitons in the heavily n-type doped material. On the basis of the cascade model interpretation of the higher-order Raman peaks in the resonant spectra, the LO phonon frequencies for wavevectors away from the Gamma point are evaluated and compared to previously published phonon dispersion curves.

引用

页数：6

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