Capillary-Force-Pattern Formation of Indium-Zinc-Oxide Thin-Film Transistor

Studies of the pattern-formation technique used with solution-processed oxide thin-film transistors (TFTs) continue to explore its uses as an efficient manufacturing method. However, research remains to be completed to achieve high performance and to apply the refined technique to various current industrial technologies. We studied the patterning technique of solution-processed indium-zinc-oxide (IZO) by using the capillary-force phenomenon, the method of controlling the pattern of the IZO semiconductor layer, and approaches to reducing problems such as the cracking that occurs during patterning. The device we fabricated was filled uniformly with droplets in the capillary-force pattern. It showed a high current-on/current-off ratio, high mobility, low threshold voltage, and low subthreshold slope. Consequently, this paper demonstrates a strategy that uses the capillary-force-pattern technique to exceed the performance of traditional fabrication techniques in managing the electrical properties of solution-processed oxide TFTs.