Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

被引：0
|
作者：
Dadamirzayev, M. G. [1 ,2 ]
机构：
[1] Namangan Engn Pedag Inst, Namangan 716003, Uzbekistan
[2] Acad Sci Uzbek, Physicotech Inst, Tashkent 700084, Uzbekistan
来源：
SEMICONDUCTORS | 2011年 / 45卷 / 03期
关键词：
Charge Carrier; Electron Temperature; Uzbekistan; Open Circuit Voltage; Microwave Field;
D O I：
10.1134/S1063782611030092
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The emf U (oc) of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.
引用
收藏
页码：288 / 291
页数：4
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