Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

被引：0

作者：

Dadamirzayev, M. G. ^{[1
,2
]}

机构：

[1] Namangan Engn Pedag Inst, Namangan 716003, Uzbekistan

[2] Acad Sci Uzbek, Physicotech Inst, Tashkent 700084, Uzbekistan

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 03期

关键词：

Charge Carrier; Electron Temperature; Uzbekistan; Open Circuit Voltage; Microwave Field;

D O I：

10.1134/S1063782611030092

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The emf U (oc) of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.

引用

页码：288 / 291

页数：4

共 50 条

[21] DISTRIBUTION OF NONEQUILIBRIUM CHARGE CARRIERS IN THE BASE REGION OF A P-N JUNCTION WITH A HIGH INJECTION COEFFICIENT
IGLITSYN, MI
KONTSEVOI, IA
SIDOROV, AI
SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (11): : 2289 - 2291
[22] THRESHOLD CURRENT FOR P-N JUNCTION LASERS
MOLL, JL
GIBBONS, JF
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (02) : 157 - 159
[23] CURRENT AMPLIFICATION BY SILICON P-N JUNCTION
KANAI, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1951, 6 (03) : 211 - 212
[24] EFFECT OF AN INTENSE MICROWAVE FIELD ON THE CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION WITH HOT CARRIERS
GULYAMOV, G
UMAROV, KB
SEMICONDUCTORS, 1994, 28 (04) : 409 - 411
[25] NEGATIVE CURRENT TRANSIENTS IN A P-N JUNCTION
GREEN, M
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (02): : 192 - &
[26] Transport of charge carriers in polycrystalline p-n structures
Saidov, MS
Abdurakhmanov, BM
Aliev, R
Saidov, AS
SEMICONDUCTORS, 1996, 30 (01) : 74 - 76
[27] MODULATION OF BASE RESISTANCE OF A P-N JUNCTION UNDER INFLUENCE OF A SINUSOIDSL MICROWAVE CURRENT
SHPIRT, VA
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (09): : 1435 - &
[28] Persistent current distributions along a p-n junction in graphene in a magnetic field
Shizuya, K.
PHYSICAL REVIEW B, 2024, 110 (15)
[29] MICROWAVE OSCILLATIONS FROM P-N JUNCTION IN GERMANIUM
MIYAI, Y
NAKASHIMA, SI
MIZUNO, H
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (03) : 563 - +
[30] SPACE-CHARGE CAPACITANCE OF A P-N JUNCTION
JORSBOE, H
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (04): : 591 - 591

← 1 2 3 4 5 →