Parasitic Effect Analysis in Memristor-Array-Based Neuromorphic Systems

被引:82
作者
Jeong, YeonJoo [1 ]
Zidan, Mohammed A. [1 ]
Lu, Wei D. [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
Memristor; neuromorphic system; vector-matrix multiplication; series-resistance; feature extraction; SELECTOR DEVICE REQUIREMENTS; FEATURE-EXTRACTION; OXIDE MEMRISTORS; INTERCONNECTS; FEATURES; NETWORK; MEMORY;
D O I
10.1109/TNANO.2017.2784364
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Neuromorphic systems using memristors as artificial synapses have attracted broad interest for energy-efficient computing applications. However, networks based on these purely passive devices can be affected by parasitic effects such as series resistance and sneak path problems. Here, we analyze the effects of parasitic factors on the performance of memristor-based neuromorphic systems. During vector-array multiplication, the line resistance can cause significant distortion of the output current and the activity of the corresponding neurons. An approach to compensate the line resistance effects based on an approximate model consisting of only few known parameters is proposed and shows excellent ability to capture the complex network behavior. During training and feature detection, the series resistance can cause significant degradation of the learned dictionary, with only a few dominant neurons being trained. Using a scaling factor based on the proposed simple model, these effects can be successfully mitigated, and the correct network operations can be restored. These results provide insight and practical measures on the parasitic effects for implementation of the neuromorphic system using memristor arrays.
引用
收藏
页码:184 / 193
页数:10
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