Surface phonon polariton characteristics of wurtzite ZnO thin film grown on silicon substrate

被引:2
作者
Ng, Sha Shiong [1 ]
Ooi, Poh Kok [1 ]
Lee, Sai Cheong [1 ]
Abdullah, Mat Johar [1 ]
Hassan, Zainuriah [1 ]
Abu Hassan, Haslan [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 05期
关键词
attenuate total reflection; leaky modes; surface phonon polaritons; zinc oxide; SAPPHIRE; SPECTROSCOPY; REFLECTION; EXCITATION; NANORODS; BULK;
D O I
10.1002/pssb.201147337
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, p-polarized far infrared attenuated total reflection (ATR) with Otto configuration technique is employed to study the surface phonon polariton (SPP) characteristics of wurtzite ZnO thin film grown on Si(111) substrate. One prominent dip corresponding to the leaky SPP mode of the ZnO is detected at 532?cm-1. The obtained result is in good agreement with the calculated ATR spectrum simulated based on the transfer matrix formulation. The origin of the observed dip is verified with the surface polariton dispersion curves based on a three anisotropic layer model (airZnOSi). The results also reveal that the real SPP and the interface phonon polariton modes for this studied structure are barely observable experimentally.
引用
收藏
页码:1058 / 1062
页数:5
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